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PD- 94208
SMPS MOSFET
IRFB42N20D
HEXFET(R) Power MOSFET
Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies
l
VDSS
200V
RDS(on) max
0.055
ID
44A
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
TO-220AB
Max.
44 31 180 2.4 330 2.2 30 2.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Notes Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient through are on page 8
Typ.
--- 0.50 ---
Max.
0.45 --- 62
Units
C/W
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1
5/7/01
IRFB42N20D
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 --- --- 3.0 --- --- --- --- Typ. --- 0.26 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.055 VGS = 10V, ID = 26A 5.5 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 21 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 91 24 43 18 69 29 32 3430 530 100 5310 210 400 Max. Units Conditions --- S VDS = 50V, ID = 26A 140 ID = 26A 36 nC VDS = 160V 65 VGS = 10V, --- VDD = 100V --- ID = 26A ns --- RG = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
510 26 33
Units
mJ A mJ
Diode Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 44 --- --- showing the A G integral reverse --- --- 180 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 26A, VGS = 0V --- 220 330 ns TJ = 25C, IF = 26A --- 1860 2790 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFB42N20D
1000
VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V TOP
1000
I D , Drain-to-Source Current (A)
100
10
1
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V BOTTOM 5.0V TOP
100
10
0.1
5.0V
20s PULSE WIDTH TJ = 25 C
1 10 100
5.0V
20s PULSE WIDTH TJ = 175 C
1 10 100
0.01 0.1
1 0.1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.5
ID = 44A
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D , Drain-to-Source Current (A)
3.0
100
TJ = 175 C
2.5
2.0
10
1.5
1
TJ = 25 C
1.0
0.5
0.1 5 6 7 8
V DS = 50V 20s PULSE WIDTH 9 10 11
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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3
IRFB42N20D
100000 20 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + Cgd ds
ID = 26A VDS = 160V VDS = 100V VDS = 40V
VGS , Gate-to-Source Voltage (V)
16
10000
C, Capacitance(pF)
Ciss Coss
1000
12
Crss
8
100
4
10 1 10 100 1000
0 0 20 40 60
FOR TEST CIRCUIT SEE FIGURE 13
80 100 120 140
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS (on)
100
TJ = 175 C
10
ID, Drain-to-Source Current (A)
100 100sec 10 1msec
1
1 Tc = 25C Tj = 175C Single Pulse 1 10 100 10msec
TJ = 25 C V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
0.1 0.2
0.1
VSD ,Source-to-Drain Voltage (V)
1000
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRFB42N20D
50
VDS VGS
RD
40
D.U.T.
+
RG
I D , Drain Current (A)
-VDD
30
10V
Pulse Width 1 s Duty Factor 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1
0.1
0.01
0.001 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB42N20D
1000
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
TOP
800
VDS
L
D R IV E R
BOTTOM
ID 11A 19A 26A
RG
VV 2 0GS
D .U .T IA S tp 0 .0 1
+ - VD D
600
A
400
Fig 12a. Unclamped Inductive Test Circuit
200
V (B R )D SS tp
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
IAS
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
10 V
QGS VG QGD
D.U.T. VGS
3mA
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFB42N20D
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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7
IRFB42N20D
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.11 3) 2.62 (.10 3) 10.5 4 (.4 15) 10.2 9 (.4 05) 3 .78 (.14 9) 3 .54 (.13 9) -A6.47 (.2 55) 6.10 (.2 40) -B4 .69 (.18 5) 4 .20 (.16 5) 1.3 2 (.052) 1.2 2 (.048)
4 15 .24 (.6 00 ) 14 .84 (.5 84 )
1.15 (.04 5) MIN 1 2 3
LE A D A S S IG N ME N T S 1 - G A TE 2 - D R A IN 3 - SO URCE 4 - D R A IN
14.09 (.5 55 ) 13.47 (.5 30 )
4 .06 (.16 0) 3 .55 (.14 0)
3X 3X 1.40 (.05 5) 1.15 (.04 5)
0 .93 (.0 37 ) 0 .69 (.0 27 ) M BAM
3X
0.55 (.0 22) 0.46 (.0 18)
0.3 6 (.01 4)
2 .5 4 (.1 00) 2X N O TE S : 1 D IME N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 14.5 M, 19 82. 2 C O N TR O LLIN G D IM E N S IO N : IN C H
2 .92 (.115 ) 2 .64 (.104 )
3 O U TL IN E C O NF O R MS T O JE D E C O U TL IN E T O -2 20 A B . 4 H E A T S IN K & LE A D ME A S U R E ME N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER
DATE CODE YEAR 7 = 1997 WEEK 19 LINE C
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
ISD 26A, di/dt 110A/s, VDD V(BR)DSS, Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS TJ 175C
Starting TJ = 25C, L = 1.45mH
RG = 25, IAS = 26A, VGS=10V
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.5/01
8
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